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BUL1203E - NPN Transistor

General Description

High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Juncti