Datasheet Details
| Part number | BUL1203E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.46 KB |
| Description | NPN Transistor |
| Datasheet | BUL1203E-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL1203E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.46 KB |
| Description | NPN Transistor |
| Datasheet | BUL1203E-INCHANGE.pdf |
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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W BUL1203E isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL1203E | High voltage fast-switching NPN power transistor | STMicroelectronics |
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BUL1203 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
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