Inchange Semiconductor BUL38D
Silicon NPN Power Transistors
| Part No. | BUL38D |
|---|---|
| Datasheet | BUL38D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.)●Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A
●Very High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in lighting applications and low cost switch- mode power suppliesABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.56 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power T...
