Inchange Semiconductor BUL39D
Silicon NPN Power Transistor
| Part No. | BUL39D |
|---|---|
| Datasheet | BUL39D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.)●Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A
●Very High Switching Speed
APPLICATIONS
●Designed for use in lighting applications and low cost switch- mode power suppliesABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 8A 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4 70 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.78 ℃/W Thermal Resistance,Junction to Ambient 70 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39DELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.