Download BUL416T Datasheet PDF
BUL416T page 2
Page 2

Datasheet Summary

isc Silicon NPN Power Transistor INCHANGE Semiconductor DESCRIPTION - Collector- Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) - Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A - Very High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in lighting applications and low cost switch- mode power...