Collector
Emitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.)
Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max) @ IC= 2A
Very High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BUL416T
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max) @ IC= 2A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost switch-
mode power supplies.
BUL416T Datasheet
