Datasheet Details
| Part number | BUL416T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.37 KB |
| Description | NPN Transistor |
| Datasheet | BUL416T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T.
| Part number | BUL416T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.37 KB |
| Description | NPN Transistor |
| Datasheet | BUL416T-INCHANGE.pdf |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-peak tp<5ms 9 A IB Base Current-Continuous 5 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 8 A 110 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.14 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL416T | High voltage fast-switching NPN power transistor | STMicroelectronics |
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BUL416 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
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