Datasheet Details
| Part number | BUL6825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.52 KB |
| Description | NPN Transistor |
| Datasheet | BUL6825-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL6825 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.52 KB |
| Description | NPN Transistor |
| Datasheet | BUL6825-INCHANGE.pdf |
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in relay drivers ,inverters ,switching regulators and deflection circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak 8 A IB Base Current-Continuous 2 A IBM Base Current-peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W BUL6825 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL6825 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
Ib=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL6825 | SILICON POWER TRANSISTOR | SavantIC |
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