Inchange Semiconductor BUL741
Silicon NPN Power Transistor
| Part No. | BUL741 |
|---|---|
| Datasheet | BUL741 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.)●Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A
APPLICATIONS
●Designed for electronic lamp ballast circuits switch-mode power supplies applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 2.5 A ICM Collector Current-peak 5A IB Base Current-Continuous 1.5 A IBM Base Current-peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 3 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.08 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;...