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BUP22C Datasheet PDF

Inchange Semiconductor BUP22C

Silicon NPN Power Transistor

Part No. BUP22C
Datasheet BUP22C Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistor
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BUP22C datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C
●High Switching Speed

APPLICATIONS

●Designed for use in converters, inverters, switching- regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 BUP22B BUP22C 750 850 V VCEO Collector-Emitter Voltage BUP22B BUP22C 400 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website: 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP22B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUP22C page 2 preview