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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
BUP30
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters,
and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
30
A
PC
Collector Power Dissipation @ TC=25℃
35
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
BUP30 Datasheet
