Datasheet Details
| Part number | BUP30 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.35 KB |
| Description | NPN Transistor |
| Datasheet | BUP30-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor BUP30.
| Part number | BUP30 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.35 KB |
| Description | NPN Transistor |
| Datasheet | BUP30-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 30 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BUP30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUP300 | IGBT | Siemens Semiconductor Group |
|
BUP302 | IGBT | Siemens Semiconductor Group |
|
BUP303 | IGBT | Siemens Semiconductor Group |
|
BUP304 | IGBT | Siemens Semiconductor Group |
|
BUP305 | IGBT | Siemens Semiconductor Group |
| Part Number | Description |
|---|---|
| BUP22 | NPN Transistor |
| BUP41 | Silicon NPN Power Transistor |
| BUP49 | NPN Power Transistor |
| BUP51 | NPN Transistor |
| BUP52 | NPN Transistor |