Datasheet Details
| Part number | BUS12A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.88 KB |
| Description | NPN Transistor |
| Datasheet | BUS12A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUS12A.
| Part number | BUS12A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.88 KB |
| Description | NPN Transistor |
| Datasheet | BUS12A-INCHANGE.pdf |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-peak tp<2ms 20 A IB Base Current-Continuous 4 A IBM Base Current-peak tp<2ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 6 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.4 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUS12A ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUS12A | Bipolar NPN Device | Seme LAB |
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BUS12 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BUS46P | NPN Transistor |
| BUS48AP | NPN Transistor |