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BUT100 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) Hight Current Capability Hight Ruggedness Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Control Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(

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isc Silicon NPN Power Transistor BUT100 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Hight Current Capability ·Hight Ruggedness ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor Control ·Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak Repetitive 150 A PC Collector Power Dissipation @ TC=75℃ 300 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~200 ℃ isc website：www.iscsemi.