BUV12
BUV12 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.) @IC= 6A
- High Switching Speed
- High DC Current Gain-
: h FE= 20(Min.) @IC= 6A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~200...
