Datasheet Details
| Part number | BUV12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | NPN Transistor |
| Datasheet | BUV12-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUV12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | NPN Transistor |
| Datasheet | BUV12-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W BUV12 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUV12 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUV23 | NPN Transistor |
| BUV25 | NPN Transistor |
| BUV26 | NPN Transistor |
| BUV26G | NPN Transistor |
| BUV46A | NPN Transistor |
| BUV47 | NPN Transistor |
| BUV47A | NPN Transistor |
| BUV47AFI | NPN Transistor |
| BUV47B | NPN Transistor |
| BUV48 | NPN Transistor |