Inchange Semiconductor BUV18
Silicon NPN Power Transistor
BUV18 Specifications
- Polarity : NPN
- Max Collector Current : 50A
- Terminals : 2
- Collector Emitter Voltage : 60V
- Max Operating Temp : 200°C
Source:
Octopart
| Part No. | BUV18 |
|---|---|
| Datasheet | BUV18 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A●High Switching Speed
APPLICATIONS
●High efficiency converters●Motor drive control
●Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 120 V 60 V 7V 50 A 90 A 16 A 40 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 60 V V(BR)EBO Emitter-Base B...