BUV25
BUV25 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.)@IC= 4A
- High Power Dissipation
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 500V (Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in power switching applications in military and industrial equipments.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
