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BUV25 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 4A High Power Dissipation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power sw

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isc Silicon NPN Power Transistor BUV25 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 4A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments.