Datasheet4U Logo Datasheet4U.com

BUV50 - NPN Transistor

Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

Datasheet preview – BUV50

Datasheet Details

Part number BUV50
Manufacturer Inchange Semiconductor
File Size 206.51 KB
Description NPN Transistor
Datasheet download datasheet BUV50 Datasheet
Additional preview pages of the BUV50 datasheet.

📁 Similar Datasheet

  • BUV50 - SILICON POWER TRANSISTOR (SavantIC)
  • BUV50 - Bipolar NPN Device (Seme LAB)
  • BUV51 - Bipolar NPN Device (Seme LAB)
  • BUV51 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUV52 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUV52A - FAST SWITCHING POWER TRANSISTOR (Seme LAB)
  • BUV52A - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUV56 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUV10 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
Published: |