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BUV50 - NPN Transistor

General Description

High Current Capability Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Full PDF Text Transcription for BUV50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUV50. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed ·Minimum L...

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age- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.

📁 Similar Datasheet

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SavantIC Logo BUV50 SILICON POWER TRANSISTOR SavantIC
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