Datasheet Details
| Part number | BUV70 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | NPN Transistor |
| Datasheet | BUV70-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUV70.
| Part number | BUV70 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | NPN Transistor |
| Datasheet | BUV70-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor controls, switching mode power supplies applications.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1300 V 600 V 6 V 10 A 15 A 3 A 6 A 140 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.89 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
Ib=0 600 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUV70 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BUV12 | NPN Transistor |
| BUV23 | NPN Transistor |
| BUV25 | NPN Transistor |
| BUV26 | NPN Transistor |
| BUV26G | NPN Transistor |
| BUV46A | NPN Transistor |
| BUV47 | NPN Transistor |
| BUV47A | NPN Transistor |
| BUV47AFI | NPN Transistor |
| BUV47B | NPN Transistor |