Datasheet Details
| Part number | BUW24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.97 KB |
| Description | NPN Transistor |
| Datasheet | BUW24-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUW24.
| Part number | BUW24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.97 KB |
| Description | NPN Transistor |
| Datasheet | BUW24-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 350V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUW24 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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