Datasheet Details
| Part number | BUW34 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.32 KB |
| Description | NPN Transistor |
| Datasheet | BUW34-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUW34 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.32 KB |
| Description | NPN Transistor |
| Datasheet | BUW34-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 5 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W BUW34 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW34 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BUW34 | Bipolar NPN Device | Seme LAB |
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BUW34 | SILICON POWER TRANSISTOR | SavantIC |
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