Datasheet Details
| Part number | BUW36 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.64 KB |
| Description | NPN Transistor |
| Datasheet | BUW36-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUW36.
| Part number | BUW36 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.64 KB |
| Description | NPN Transistor |
| Datasheet | BUW36-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 5 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUW36 | Bipolar NPN Device | Seme LAB |
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BUW36 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BUW34 | NPN Transistor |
| BUW35 | NPN Transistor |
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| BUW11A | NPN Transistor |
| BUW11AF | NPN Transistor |
| BUW11F | NPN Transistor |
| BUW11W | NPN Transistor |
| BUW12 | NPN Transistor |
| BUW12A | NPN Transistor |
| BUW13 | NPN Transistor |