Inchange Semiconductor BUW48
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●High Current Capability●Fast Switching Speed
●Low Saturation Voltage and High Gain
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as:●Switching regulators
●Motor control
●High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 120 V 60 V 7 V 30 A 45 A 8 A 12 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW48
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.