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BUW49 Datasheet PDF

Inchange Semiconductor BUW49

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. BUW49
Datasheet BUW49 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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BUW49 datasheet page 1 preview

DESCRIPTION

●High Current Capability
●Fast Switching Speed
●Low Saturation Voltage and High Gain
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as:
●Switching regulators
●Motor control
●High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 80 V 7 V 30 A 40 A 6 A 10 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW49

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUW49 page 2 preview