Datasheet Details
| Part number | BUW50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.57 KB |
| Description | NPN Transistor |
| Datasheet | BUW50-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUW50.
| Part number | BUW50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.57 KB |
| Description | NPN Transistor |
| Datasheet | BUW50-INCHANGE.pdf |
|
|
|
·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier applications.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 125 V 7 V 25 A 50 A 6 A 12 A 150 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW50 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
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