Datasheet Details
| Part number | BUW86 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.13 KB |
| Description | NPN Transistor |
| Datasheet | BUW86-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUW86 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.13 KB |
| Description | NPN Transistor |
| Datasheet | BUW86-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 240 V VCES Collector-Emitter Voltage VBE=0 240 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 62.5 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.8 ℃/W BUW86 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW86 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
| Part Number | Description |
|---|---|
| BUW87 | NPN Transistor |
| BUW87A | NPN Transistor |
| BUW11 | NPN Transistor |
| BUW11A | NPN Transistor |
| BUW11AF | NPN Transistor |
| BUW11F | NPN Transistor |
| BUW11W | NPN Transistor |
| BUW12 | NPN Transistor |
| BUW12A | NPN Transistor |
| BUW13 | NPN Transistor |