Inchange Semiconductor BUX33
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BUX33 |
|---|---|
| Datasheet | BUX33 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Converters●Inverters
●Switching regulators
●Motor controls
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX VCEV Collector-Emitter Voltage VBE= 1.5V 800 VCER Collector-Emitter Voltage RBE= 10Ω 800 VCEX Collector-Emitter Voltage VBE= -1.5V 450 VCEO Collector-Emitter Voltage 400 UNIT V V V V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDI...