Datasheet Details
| Part number | BUX37 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.04 KB |
| Description | NPN Transistor |
| Datasheet | BUX37-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | BUX37 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.04 KB |
| Description | NPN Transistor |
| Datasheet | BUX37-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Solenoid drivers ·Automotive ignition ·Series and shunt regulators ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 35 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W BUX37 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0;
V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUX37 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BUX30 | NPN Transistor |
| BUX39 | NPN Transistor |
| BUX10 | NPN Transistor |
| BUX11 | NPN Transistor |
| BUX16 | NPN Transistor |
| BUX16A | NPN Transistor |
| BUX16B | NPN Transistor |
| BUX16C | NPN Transistor |
| BUX17 | NPN Transistor |
| BUX17A | NPN Transistor |