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BUX39 - NPN Transistor

General Description

Low Collector Saturation Voltage High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching-control amplifiers, power gates, switching regulators, power switching

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isc Silicon NPN Power Transistor BUX39 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching-control amplifiers, power gates, switching regulators, power switching circuits converters, inverters and control circuits. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.