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BUX59 - NPN Transistor

Description

Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

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Datasheet Details

Part number BUX59
Manufacturer Inchange Semiconductor
File Size 201.70 KB
Description NPN Transistor
Datasheet download datasheet BUX59 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BUX59 isc website：www.iscsemi.
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