Datasheet Details
| Part number | BUY12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.79 KB |
| Description | NPN Transistor |
| Datasheet | BUY12-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUY12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.79 KB |
| Description | NPN Transistor |
| Datasheet | BUY12-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 210 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W BUY12 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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| BUY21 | NPN Transistor |
| BUY22 | NPN Transistor |
| BUY23 | NPN Transistor |
| BUY29 | NPN Transistor |
| BUY30 | NPN Transistor |
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| BUY50 | NPN Transistor |
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