Datasheet4U Logo Datasheet4U.com

BUY12 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80V(Min.) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in switching mode power supply.

📥 Download Datasheet

Datasheet preview – BUY12

Datasheet Details

Part number BUY12
Manufacturer INCHANGE
File Size 197.79 KB
Description NPN Transistor
Datasheet download datasheet BUY12 Datasheet
Additional preview pages of the BUY12 datasheet.

📁 Similar Datasheet

  • BUY15CS23K-01 - 150V Radiation Hard power MOSFET (Infineon)
  • BUY18S - Bipolar NPN Device (Seme LAB)
  • BUY06CS23K-01 - 60V Radiation Hard power MOSFET (Infineon)
  • BUY24 - NPN Transistor (Seme LAB)
  • BUY24 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUY25CS12J-01 - 250V Radiation Hard power MOSFET (Infineon)
  • BUY25CS12K-01 - Radiation Hard power MOSFET (Infineon)
  • BUY25CS12K-11 - HiRel RadHard Power-MOS (Infineon)
  • BUY25CS45B-01 - HiRel RadHard Power-MOS (Infineon)
  • BUY30 - Bipolar NPN Device (Seme LAB)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 210 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W BUY12 isc website：www.iscsemi.
Published: |