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BUY49P - NPN Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high-current switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 5.0 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.