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BUY70B - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 325V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supplies, inve

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 325V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supplies, inverters, and CRT scanning systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.
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