Datasheet Details
| Part number | BUY94 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.68 KB |
| Description | NPN Transistor |
| Datasheet | BUY94-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUY94.
| Part number | BUY94 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.68 KB |
| Description | NPN Transistor |
| Datasheet | BUY94-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5.0 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY94 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA;
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