Inchange Semiconductor BUZ211
N-Channel MOSFET Transistor
| Part No. | BUZ211 |
|---|---|
| Datasheet | BUZ211 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)●SOA is Power Dissipation Limited
●High input impedance
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current-Single Plused 36 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channe...