BUZ23 Datasheet | Inchange Semiconductor

FEATURES - Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) - SOA is Power Dissipation Limited - High speed switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous@ TC=85℃ Drain Current-Single Plused Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.6...