Inchange Semiconductor BUZ255
N-Channel MOSFET Transistor
| Part No. | BUZ255 |
|---|---|
| Datasheet | BUZ255 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●High speed switching●Low RDS(ON)
●Easy driver for cost effective application
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Automotive power actuator drivers
●Motor controls
●DC-DC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=31℃ 13 A IDM Drain Current-Single Plused 52 A Ptot Total Dissipation@TC=25℃ 95 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.32 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W BUZ255 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA VGS(th) Gate Threshol...