Inchange Semiconductor BUZ30A
N-Channel MOSFET
| Part No. | BUZ30A |
|---|---|
| Datasheet | BUZ30A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max)●High current capability
●150℃ operating temperature
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High current , high speed switching
●Solenoid and relay drivers
●DC-DC & DC-AC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=26℃ 21 A IDM Drain Current-Single Plused 84 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W BUZ30A isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUZ30AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...