BUZ46 Datasheet | Inchange Semiconductor

FEATURES - Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) - SOA is Power Dissipation Limited - High speed switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous@ TC=37℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.6 ℃/W BUZ46 isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER...