Datasheet Details
| Part number | C0718 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.72 KB |
| Description | NPN Transistor |
| Datasheet | C0718-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718.
| Part number | C0718 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.72 KB |
| Description | NPN Transistor |
| Datasheet | C0718-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
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