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C122B1 Datasheet Thyristors

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor C122B1.

General Description

·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=75℃ ) PG(AV) Average gate power dissipation Tp=8.3ms;Tc=70℃ Tj Operating junction temperature Tstg Storage temperature MIN UNIT 200 V 200 V 8 A 90 A 0.5 W -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor C122B1 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage ITM= 16A VD = 12 V;

RL=100Ω@Tj=25℃ Tj=-40℃ VD = 12 V;

RL=100Ω@Tj=25℃ Tj=-40℃ Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 10 0.5 mA 1.83 V 25 40 mA 1.5 2.0 V 1.8 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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