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C2484 - 2SC2484

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High Power Dissipation Complement to Type 2SA1060 APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-B

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2484 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 80 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn http://www.Datasheet4U.