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C2489 - 2SC2489

General Description

Good Linearity of hFE Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) Wide Area of Safe Operation Complement to Type 2SA1065 APPLICATIONS

Designed for AF amplifier,high power amplifier applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS ·Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 15 A PC 120 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.nDatasheet.