Description
High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) - High Switching Speed - High Reliability APPLICATIONS - Switching regulators - Ultrasonic generators - High frequency inverters - General purpose power amplifiers SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 400 7 3 1 40 150 -45~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg SYMBOL Rth j-c PARAMETER isc Website：.iscsemi.cn htp:/w.BDTIC Free Datasheet http://..net/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2929 TYP.
