Datasheet Details
| Part number | C3306 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.29 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C3306-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306.
| Part number | C3306 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.29 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C3306-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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C3306 | 2SC3306 | Toshiba Semiconductor |
| Part Number | Description |
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