C3527 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage High Collector Current Good Linearity of hFE APPLICATIONS

switching applications.

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C3527 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	C3527
Manufacturer	Inchange Semiconductor
File Size	207.99 KB
Description	Silicon NPN Power Transistor
Datasheet	C3527 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER i.cnCollector-Base Voltage .iscsemCollector-Emitter Voltage wwwEmitter-Base voltage VALUE UNIT 500 V 400 V 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IBB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Downloaded from Elcodis.