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C3747 - Silicon NPN Power Transistor

General Description

Good Linearity of hFE High Switching Speed Low Collector Saturation Voltage Complement to Type 2SA1470 APPLICATIONS Inductance, lamp drivers Inverters, converters Power amplifiers

High-speed switching applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·Complement to Type 2SA1470 APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature 10 A 25 W 2.0 150 ℃ -55~150 ℃ isc Website：www.iscsemi.