Datasheet Details
| Part number | C3747 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.68 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C3747-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | C3747 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.68 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C3747-INCHANGE.pdf |
|
|
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·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Voltage ·plement to Type 2SA1470 APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A ICM Collector Current-Pulse Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature 10 A 25 W 2.0 150 ℃ -55~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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C3747 | 2SC3747 | Sanyo Semicon Device |
| Part Number | Description |
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