C4129 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS

applications.

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Datasheet Details

Part number	C4129
Manufacturer	Inchange Semiconductor
File Size	184.61 KB
Description	Silicon NPN Power Transistor
Datasheet	C4129 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 7A 1.5 W 30 150 ℃ -55~150 ℃ isc Website：www.iscsemi.