Datasheet4U Logo Datasheet4U.com

C4371 - Silicon NPN Power Transistor

General Description

High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) Excellent Switching Times: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A APPLICATIONS Switching regulator application High voltage switching application High Speed DC-DC converter application Fluorescent light ballas

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: tr= 1.0μs(Max), tf= 1.