C4371 Description
·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: IB= 1A B 2SC4371 MIN 400 500 TYP.
C4371 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: IB= 1A B 2SC4371 MIN 400 500 TYP.