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Inchange Semiconductor
C4421
C4421 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) - Wide Area of Safe Operation - High Speed Switching APPLICATIONS - Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-Peak 6A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1.2 A 2 W 150 ℃ -55~150 ℃ isc Website:.iscsemi.cn - INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4421 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...