CD551B
CD551B is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-35
VCEO
Collector-Emitter Voltage
-35
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature Range
-55~125 ℃
CD551B isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10m A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1m A; IE=...
