Inchange Semiconductor CD551B
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | CD551B |
|---|---|
| Datasheet | CD551B Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Minimum Lot-to-Lot variations for robust device performance and reliable operationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.8 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ CD551B isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A VBE(sat) Base-Emitter On Voltage IC= -0.5A; VCE= -0.05V ICBO Collector Cutoff Current VCB= -30V; IE= 0 ICEO Emitter Cutoff Current VCE= -30V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2V CD551B MIN TYP.