CD551B - Silicon PNP Power Transistor

Datasheet Summary

Description

Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	CD551B
Manufacturer	INCHANGE
File Size	220.72 KB
Description	Silicon PNP Power Transistor
Datasheet	CD551B Datasheet
Additional preview pages of the CD551B datasheet.

📁 Similar Datasheet

CD5518B - Zener Diode (Aeroflex)
CD5518B - Zener Diode (MA-COM)
CD5518B - ZENER DIODE (CDI)
CD5518B - Zener Diode (VPT)
CD5519B - Zener Diode (Aeroflex)
CD5519B - Zener Diode (MA-COM)
CD5519B - ZENER DIODE (CDI)
CD5519B - Zener Diode (VPT)
CD5520B - Zener Diode (Aeroflex)
CD5520B - Zener Diode (MA-COM)

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Power Transistor DESCRIPTION ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.8 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ CD551B isc website： www.iscsemi.

Published: Mar 12, 2021 |