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CLA30MT1200NPZ Datasheet Thyristors

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors CLA30MT1200NPZ.

General Description

·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 1200 V 1200 V 15 A 170 185 A 0.2 W -40~125 ℃ -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

Tj=25℃ VD=VDRM Rated;

Tj=125℃ VTM On-state voltage IT=15A Ⅰ IGT Gate-trigger current VD =6V Ⅱ Ⅲ VGT Gate-trigger voltage VD =6V Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.01 1.5 mA 1.38 V 40 40 mA 40 1.3 V 0.95 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors CLA30MT1200NPZ NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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