Datasheet Details
| Part number | CMA30E1600PB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 156.70 KB |
| Description | Thyristors |
| Datasheet | CMA30E1600PB-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor CMA30E1600PB.
| Part number | CMA30E1600PB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 156.70 KB |
| Description | Thyristors |
| Datasheet | CMA30E1600PB-INCHANGE.pdf |
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·With TO-220 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN UNIT 1600 V 1600 V Tc=40℃ 30 A 36 A 50HZ 260 60HZ 280 A 0.5 W -40~125 ℃ -40~150 ℃ isc website:.iscsemi.
isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CMA30E1600PB ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM VTM On-state voltage ITM= 30A ITM= 60A Tj=25℃ Tj=125℃ IGT Gate-trigger current VD = 6V;
RL=100Ω MIN MAX UNIT 0.01 2 mA 1.42 1.80 V 28 mA VGT Gate-trigger voltage VD = 6V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CMA30E1600PB | Thyristor | IXYS |
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CMA30E1600PN | Thyristor | IXYS |
| Part Number | Description |
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| CMA30E1600PN | Thyristors |
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| CMA80E1600HB | Thyristor |