D10L200SW
FEATURES
- Low Forward Voltage
- High Frequency
- Extremely low reverse leakage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching mode power supplies
- Lighting application
- DC/DC Converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
Peak Repetitive Reverse Voltage DC Blocking Voltage
IF(AV) IFSM TJ
Average Rectified Forward Current
Non-repetitive Peak Surge Current
(8.3ms single half sine-wave superimposed
A on rated load per diode)
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 15
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300us,Duty Cycle≤2%)
SYMBOL...
