Inchange Semiconductor D10L200SW
Schottky Barrier Rectifier
| Part No. | D10L200SW |
|---|---|
| Datasheet | D10L200SW Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Low Forward Voltage●High Frequency
●Extremely low reverse leakage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching mode power supplies●Lighting application
●DC/DC Converters
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage DC Blocking Voltage 200 V IF(AV) IFSM TJ Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current (8.3ms single half sine-wave superimposed 200 A on rated load per diode) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor D10L200SW THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 15 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300us,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Forward Voltage per diode IR Reverse Current per diode IF= 10A ; TJ= 25...